Low-frequency noise in quantum point contacts
نویسندگان
چکیده
منابع مشابه
Low-frequency noise in transport through quantum pOint contacts
We report the noise characteristics of quantum point contacts between 100 Hz and 100 kHz at 4.2 K. The noise consists of a 111 component on top of a white background. The 1I/noise increases as the contact width decreases and shows peaks between the quantized resistance plateaus. The white noise background increases with current but is much lower than the fuB shot noise level, suggesting that sh...
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Shot noise of series quantum point contacts forming a sequence of cavities in a two dimensional electron gas are studied theoretically and experimentally. Noise in such a structure originates from local scattering at the point contacts as well as from chaotic motion of the electrons in the cavities. The observed shot noise allows to distinguish between noise of the point contacts and noise from...
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Alessandro Cresti , Giuseppe Grosso (2) and Giuseppe Pastori Parravicini (3) (1) NEST-INFM, Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa, Italy, and Dipartimento di Fisica E. Fermi, Largo B. Pontecorvo 3, I-56127 Pisa, Italy [email protected] (2) NEST-INFM and Dipartimento di Fisica E. Fermi, Largo B. Pontecorvo 3, I-56127 Pisa, Italy (3) NEST-INFM and Dipartimento di Fisica ...
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We study the negative correction to the quantized value 2e(2)/h of the conductance of a quantum point contact due to the backscattering of electrons by acoustic phonons. The correction shows activated temperature dependence and also gives rise to a zero-bias anomaly in conductance. Our results are in qualitative agreement with recent experiments studying the 0.7 feature in the conductance of qu...
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Spin-density-functional theory of quantum point contacts (QPCs) reveals the formation of a local moment with a net of one electron spin in the vicinity of the point contact-supporting the recent report of a Kondo effect in a QPC. The hybridization of the local moment to the leads decreases as the QPC becomes longer, while the on site Coulomb-interaction energy remains almost constant.
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1994
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/9/12/003